PART |
Description |
Maker |
FS150R12KE3G |
200 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
DIM200MKS12-A000 |
200 A, 1200 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
DIM200WHS12-A000 |
200 A, 1200 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
|
1MBI200NB-120 |
200 A, 1200 V, N-CHANNEL IGBT
|
FUJI ELECTRIC CO LTD
|
IXGH15N120B2D1 IXGT15N120B2D1 |
HiPerFAST IGBT 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA
|
IXYS Corporation
|
FZ50A06KL DF100R12KF-A FZ1200R12KF1 |
50 A, 600 V, N-CHANNEL IGBT 100 A, 1200 V, N-CHANNEL IGBT 1200 A, 1200 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS[IXYS Corporation]
|
2MBI225U4J-120-50 AN28F256A-150 AN28F256A-120 AP28 |
x8 Flash EEPROM IGBT Module 300 A, 1200 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|